IndiumV3, Chine, Analysis, bibRecord, 001C23

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Identifieur interne : 001C23 ( Chine/Analysis ); précédent : 001C22; suivant : 001C24

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Auteurs : RBID : Pascal:03-0281003

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Nanomatériau, Nanostructure, Point quantique, Semiconducteur III-V, Gallium arséniure, Indium arséniure, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Méthode SSMBE, Recuit thermique, Relation fabrication structure, Relation fabrication propriété, Photoluminescence, Phonon, Anisotropie optique, 8107T, 7867H, 8115H, InGaAs, GaAs, As Ga In, As Ga.

English descriptors

KwdEn :
- Crystal growth from vapors, Experimental study, Fabrication property relation, Fabrication structure relation, Gallium arsenides, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Nanostructured materials, Nanostructures, Optical anisotropy, Phonons, Photoluminescence, Quantum dots, Solid source molecular beam epitaxy, Thermal annealing.

Abstract

The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00D248
to stream Main, to step Repository: 00D720
to stream Chine, to step Extraction: 001C23

Links to Exploration step

Pascal:03-0281003

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots</title>
<author><name sortKey="Xu, Z C" uniqKey="Xu Z">Z. C. Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Optoelectronics Group, Research Center COAL Technical University of Denmark. DTU345</s1>
<s2>2800 Lyngby</s2>
<s3>DNK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<wicri:noRegion>2800 Lyngby</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Leosson, K" uniqKey="Leosson K">K. Leosson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Optoelectronics Group, Research Center COAL Technical University of Denmark. DTU345</s1>
<s2>2800 Lyngby</s2>
<s3>DNK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<wicri:noRegion>2800 Lyngby</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Birkedal, D" uniqKey="Birkedal D">D. Birkedal</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Optoelectronics Group, Research Center COAL Technical University of Denmark. DTU345</s1>
<s2>2800 Lyngby</s2>
<s3>DNK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<wicri:noRegion>2800 Lyngby</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hvam, J M" uniqKey="Hvam J">J. M. Hvam</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Optoelectronics Group, Research Center COAL Technical University of Denmark. DTU345</s1>
<s2>2800 Lyngby</s2>
<s3>DNK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<wicri:noRegion>2800 Lyngby</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sadowski, J" uniqKey="Sadowski J">J. Sadowski</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Niels Bohr Institute, Copenhagen University</s1>
<s2>2100 Copenhagen</s2>
<s3>DNK</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Danemark</country>
<placeName><settlement type="city">Copenhague</settlement>
<region type="région" nuts="2">Hovedstaden</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Zhao, Z Y" uniqKey="Zhao Z">Z. Y. Zhao</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics. Anhui University</s1>
<s2>Hefei, Anhui</s2>
<s3>CHN</s3>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Department of Physics. Anhui University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chen, X S" uniqKey="Chen X">X. S. Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Shanghai Insititute of Technical Physics, Chinese Academy of Science, YuTian Road 500</s1>
<s2>Shanghai</s2>
<s3>CHN</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Liu, Y M" uniqKey="Liu Y">Y. M. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics. Anhui University</s1>
<s2>Hefei, Anhui</s2>
<s3>CHN</s3>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Department of Physics. Anhui University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yang, K T" uniqKey="Yang K">K. T. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics. Anhui University</s1>
<s2>Hefei, Anhui</s2>
<s3>CHN</s3>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Department of Physics. Anhui University</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0281003</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0281003 INIST</idno>
<idno type="RBID">Pascal:03-0281003</idno>
<idno type="wicri:Area/Main/Corpus">00D248</idno>
<idno type="wicri:Area/Main/Repository">00D720</idno>
<idno type="wicri:Area/Chine/Extraction">001C23</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from vapors</term>
<term>Experimental study</term>
<term>Fabrication property relation</term>
<term>Fabrication structure relation</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Optical anisotropy</term>
<term>Phonons</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Solid source molecular beam epitaxy</term>
<term>Thermal annealing</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Nanomatériau</term>
<term>Nanostructure</term>
<term>Point quantique</term>
<term>Semiconducteur III-V</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Epitaxie jet moléculaire</term>
<term>Méthode SSMBE</term>
<term>Recuit thermique</term>
<term>Relation fabrication structure</term>
<term>Relation fabrication propriété</term>
<term>Photoluminescence</term>
<term>Phonon</term>
<term>Anisotropie optique</term>
<term>8107T</term>
<term>7867H</term>
<term>8115H</term>
<term>InGaAs</term>
<term>GaAs</term>
<term>As Ga In</term>
<term>As Ga</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>251</s2>
</fA05>
<fA06><s2>1-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Molecular beam epitaxy 2002: proceedings of the twelfth international conference on molecular beam epitaxy, San Francisco, CA, USA, 15-20 September 2002</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>XU (Z. C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LEOSSON (K.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BIRKEDAL (D.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HVAM (J. M.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SADOWSKI (J.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>ZHAO (Z. Y.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>CHEN (X. S.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>LIU (Y. M.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>YANG (K. T.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>HARRIS (J. S.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>MILLER (D. L.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>TU (C. W.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Optoelectronics Group, Research Center COAL Technical University of Denmark. DTU345</s1>
<s2>2800 Lyngby</s2>
<s3>DNK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Niels Bohr Institute, Copenhagen University</s1>
<s2>2100 Copenhagen</s2>
<s3>DNK</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Physics. Anhui University</s1>
<s2>Hefei, Anhui</s2>
<s3>CHN</s3>
<sZ>6 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Shanghai Insititute of Technical Physics, Chinese Academy of Science, YuTian Road 500</s1>
<s2>Shanghai</s2>
<s3>CHN</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Stanford University</s1>
<s2>Stanford, CA</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Penn State University</s1>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of California at San Diego</s1>
<s2>San Diego, CA</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>177-180</s1>
</fA20>
<fA21><s1>2003</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000110885240320</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>13 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>03-0281003</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A05Y</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H67H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Méthode SSMBE</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Solid source molecular beam epitaxy</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Método SSMBE</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Recuit thermique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Thermal annealing</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Recocido térmico</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Relation fabrication structure</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Fabrication structure relation</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Relación fabricación estructura</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Relation fabrication propriété</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Fabrication property relation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Relación fabricación propiedad</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Phonon</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Phonons</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Anisotropie optique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Optical anisotropy</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8107T</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7867H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>16</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>81</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>81</s5>
</fC07>
<fN21><s1>181</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Molecular Beam Epitaxy</s1>
<s2>12</s2>
<s3>San Francisco, CA USA</s3>
<s4>2002-09-15</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001C23 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 001C23 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:03-0281003
   |texte=   Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri